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¹°¼ºÇ¥ »çÆÄÀ̾î(Al©üO©ý) |
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GENERAL |
Chemical Formula |
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Al2O3 |
Crystal Stucture |
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Hexagonal System ((hk o 1) |
Unit Cell Dimension |
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a=4.758 A,A c=12.991 A, c:a=2.730 |
PHYSICAL |
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Metric |
Density |
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3.98 g/cc |
Hardness |
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1525 - 2000 Knoop, 9 mhos |
Melting Point |
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2310 K (2040¡Æ C) |
STRUCTURAL |
Tensile Strength |
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275 MPa to 400 MPa |
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at 20¡Æ |
400 MPa |
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at 500¡Æ C |
275 MPa |
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at 1000¡Æ C |
355 MPa |
Flexural Stength |
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480 MPa to 895 MPa |
Compression Strength |
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2.0 GPa (ultimate) |
MODULUS |
Young's Modulus, E |
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345 GPa |
(Modulus of Elasticity) |
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Bulk Modulus, k |
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250 GPa |
(Modulus of Compression) |
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Shear Modulus, G |
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145 GPa |
(Modulus of Rigidity) |
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MOR |
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350 MPa to 690 MPa |
(Modulus of Rupture) |
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Poisson's Ratio |
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Sapphire is anisotropic.
It is orientation dependent. |
THERMAL |
Thermal Conductivity |
at 0¡Æ C |
46.06 W/(m ¡¤ K) |
(60¡Æ orientation) |
at 100¡Æ C |
25.12 W/(m ¡¤ K) |
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at 400¡Æ C |
12.56 W/(m ¡¤ K) |
Specific Heat at 20¡Æ C |
|
0.187 cal/(g ¡¤ ¡ÆC) |
Heat Capacity |
at 20¡Æ C |
18.63 cal/ (mole ¡¤ ¡ÆC) |
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at 1000¡Æ C |
29.86 cal/ (mole ¡¤ ¡ÆC) |
Thermal Expansion Coefficient |
20¡Æ to 50¡Æ C |
5.8 x 10-6/ ¡ÆC |
(60 degree orientation) |
20¡Æ to 500¡ÆC |
7.7 x 10-6/ ¡ÆC |
ELECTRICAL |
Frequency |
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E l to C axis |
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Dielectric Constant |
Loss Tangent |
1 MHz |
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9.39 |
0.0001 |
3 GHz |
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9.39 |
<0.0001 |
8.5 GHz |
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9.39 |
<0.00002 |
Volume Resistivity at 25 ¡ÆC |
1014 ohm ¡¤ cm |
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